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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) *High Power Dissipation: PC= 125W(Max)@TC=25 *Complement to Type 2SB656 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE 160 160 5 12 20 125 150 -55~150 UNIT V .cn mi e V V A A Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD676 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain hFE-1 Classifications B 60-120 C 100-200 w w scs .i w IC= 6A; VCE= 5V .cn mi e 60 20 200 isc Websitewww.iscsemi.cn |
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